Ion beam synthesis of InAs, InGaAs and GaAs nanocrystals in Silicon


Ion beam synthesis of InAs, InGaAs and GaAs nanocrystals in Silicon

Rebohle, L.; Wutzler, R.; Prucnal, S.; Hübner, R.; Grenzer, J.; Helm, M.; Skorupa, W.

InAs, InGaAs and GaAs nanocrystals (NCs) were fabricated by sequential ion implantation and flash lamp annealing. In detail, silicon-SiO2-silicon structures were provided with a SiO2 capping layer followed by the sequential implantation of In, Ga and As ions with fluences in the range of a few 1016 at./cm2. In the following step of flash lamp annealing the NCs will be formed in the Si device layer by liquid phase epitaxy. The resulting III-V NCs are mostly single-crystalline with sizes in the range of a few to a few tens of nm. Depending on the specific segregation coefficients and melting temperatures, elemental In clusters can be also formed. The proposed qualitative model for the NC formation is based on Transmission electron microscopy (TEM), Raman spectroscopy, and X-ray diffraction (XRD) measurements.

Keywords: InAs; InGaAs and GaAs nanocrystals; ion implantation; flash lamp annealing; III-V integration into silicon

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Publ.-Id: 20858