Ion beam synthesis of CoSi2 - microstructures by means of a high current focused ion beam


Ion beam synthesis of CoSi2 - microstructures by means of a high current focused ion beam

Bischoff, L.; Teichert, J.; Hesse, E.; Panknin, D.; Skorupa, W.

The bfabrication of CoSi2 - structures by stoichiometric implantation of Co+ (E = 30...35 keV, Iion = 1.3nA) and Co++ ions (E = 60 keV, Iion = 0.6nA) at doses between 0.3 and 5x1017 cm-2 and a subsequent two step annealing (600°C, 60 min; 1000°C, 30 min in N2) is demonstrated. The dose dependence and the influence of the substrate temperature were studied. The quality of the silicide submicron structures was investigated by SEM, EDX and electrical measurements.

  • Contribution to proceedings
    Proceedings of the Ninth International Conference on Ion Beam Modification of Materials Canberra, Australia, 5-10 February, 1995

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Publ.-Id: 2091