Electrical and microstructural properties of highly boron-implantation doped 6H-SiC


Electrical and microstructural properties of highly boron-implantation doped 6H-SiC

Panknin, D.; Wirth, H.; Mücklich, A.; Skorupa, W.

Boron was implanted into 6H-SiC layers to form a 500 nm thick layer with plateau concentrations up to 1.5E21 cm-3. The electrical and microstructural effects were investigated using temperature dependent Hall measurements, XTEM and SIMS. After annealing at temperatures between 1550 and 1750 C for B concentrations above the solubility extraordinary B diffusion and Ostwald ripening is observed forming boron clusters. For B concentrations near the solubility the outdiffusion is reduced. These effects are confirmed by Hall Effect measurements showing a stagnation of hole concentration with increasing B concentration above 1.5E19 cm-3. The electrical activation is limited due to the solubility of boron in 6H-SiC at about 1600 C. Higher B concentrations as well as higher annealing temperatures, including short time annealing at about 2000 C, do not lead to higher activation.

Keywords: SiC; boron; ion implantation; annealing; diffusion; electrical efficiency

  • Journal of Applied Physics Vo. 89, No. 6, 15. March 2001, p. 3162-3167

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Publ.-Id: 2130