Atomistic modeling of ion-beam and thermally induced processes in Si and Ge


Atomistic modeling of ion-beam and thermally induced processes in Si and Ge

Liedke, B.; Heinig, K.-H.; Schmidt, B.; Bulutay, C.; Böttger, R.; Posselt, M.; Bracht, H.

The abstract was not needed

Keywords: Kinetic Monte-Carlo; atomistic simulation; silicon; germanium; molecular dynamics; phase separation; self organization

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Publ.-Id: 21345