Investigation of ionoluminescence of semiconductor materials using helium ion microscopy


Investigation of ionoluminescence of semiconductor materials using helium ion microscopy

Veligura, V.; Hlawacek, G.; van Gastel, R.; Zandvliet, H. J. W.; Poelsema, B.

Helium ion microscopy has been employed to investigate the ionoluminescence of various semiconduc- tors. We have verified the possibility of application of this technique for high-resolution ionolumines- cence analysis of this kind of materials. In this work the ionoluminescence signal was induced by a sub- nanometer Heþ beam with an energy of 35 keV. Several types of semiconductor samples were investigated: bulk materials, nanowires and quantum dots. All samples were found to exhibit ionoluminescence. However, the ionoluminescence signal rapidly degrades under the ion irradiation. The signal degradation was found to depend not only on the sample's composition, but also on its size. The ionoluminescence emission spectra were recorded and emission peaks identified.

Keywords: Ionoluminescence Helium ion microscopy Semiconductors Nanowires Quatum dots

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Publ.-Id: 21549