Raman scattering analysis of defects in 6H-SiC induced by ion implantation
Raman scattering analysis of defects in 6H-SiC induced by ion implantation
Perez-Rodriguez, A.; Gonzalez-Varona, O.; Calvo-Barrio, L.; Morante, J. R.; Wirth, H.; Panknin, D.; Skorupa, W.
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Contribution to external collection
Mat. Sci. Forum 258 - 263 (1998) 727
Permalink: https://www.hzdr.de/publications/Publ-2176
Publ.-Id: 2176