Carbon p Electron Ferromagnetism in SiC Single Crystal
Carbon p Electron Ferromagnetism in SiC Single Crystal
Wang, Y.; Liu, Y.; Wang, G.; Anwand, W.; Jenkins, C. A.; Arenholz, E.; Munnik, F.; Gordan, O. D.; Salvan, G.; Zahn, D. R. T.; Chen, X.; Gemming, S.; Helm, M.; Zhou, S.
Defect induced ferromagnetism has been reported in wide-bandgap semiconductors as well as in carbon-based materials, when defects are introduced in an appropriate way. It is desirable to establish a direct relation between such ferromagnetism and defects. Here, we succeed to reveal the origin of defect-induced ferromagnetism using SiC by X-ray magnetic circular dichroism (XMCD). In addition, the theoretical model is calculated by first-principles theory. We show that the long-range ferromagnetic coupling is due to the p electrons of the nearest-neighbor carbon atoms around VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.
Keywords: XMCD; defect-induced ferromagnetism; SiC
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Lecture (Conference)
79. Jahrestagung der DPG und DPG-Frühjahrstagung, 15.-20.03.2015, Berlin, Germany
Permalink: https://www.hzdr.de/publications/Publ-21933
Publ.-Id: 21933