Theoretical investigation of an in situ k-restore process for damaged ultra-low-k materials based on plasma enhanced fragmentation


Theoretical investigation of an in situ k-restore process for damaged ultra-low-k materials based on plasma enhanced fragmentation

Förster, A.; Wagner, C.; Gemming, S.; Schuster, J.

The authors present theoretical investigations of a k-restore process for damaged porous ultra-low-k (ULK) materials. The process is based on plasma enhanced fragmented silylation precursors to replace k-value damaging, polar Si-OH and Si-H bonds by k-value lowering Si-CH3 bonds. The authors employ density functional theory to determine the favored fragments of silylation precursors and show the successful repair of damaged bonds on our model system.

Keywords: density-functional theory; molecules; adsorption; passivation; molecular dynamics

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Permalink: https://www.hzdr.de/publications/Publ-22498
Publ.-Id: 22498