YMnO3- based MIS structure with a selective, capacitive photo-detecting properties


YMnO3- based MIS structure with a selective, capacitive photo-detecting properties

Bogusz, A.; Choudhary, O. S.; Skorupa, I.; Bürger, D.; Lawerenz, A.; Schmidt, O. G.; Schmidt, H.

This work investigates the YMnO3/Si3N4 /p-Si structures in terms of novel, capacitance-based photo-detecting properties. Photocapacitance-voltage (C-V) characteristics of the YMnO3/Si3N4 /p-Si structures have been determined at room temperature for a wide spectral range (300-980 nm). C-V characteristics indicate a charge trapping process which is used as the basis for novel approach to photodetectors. Our model discusses the immobilization of otherwise mobile charges in Si3N4 when the negative polarization charge of the multiferroic YMnO3 is at the YMnO3/Si3N4 interface. The observed capacitance minima are well-defined by the direction of bias ramp. Voltages corresponding to these minima were further used as a reference point for a read out of capacitance in retention and optical selectivity tests. Results indicate that investigated structures exhibit a good photo-sensitivity of red light and the retention properties are non-volatile for one capacitance branch.

  • Lecture (Conference)
    DPG Spring Meeting 2015, 15.-20.03.2015, Berlin, Germany

Permalink: https://www.hzdr.de/publications/Publ-22830
Publ.-Id: 22830