Synthesis of SiC microstructures in Si technology by high dose carbon implantation: Etch stop properties


Synthesis of SiC microstructures in Si technology by high dose carbon implantation: Etch stop properties

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Calvo-Barrio, L.; Morante, J. R.; Esteve, J.; Acero, M. C.; Skorupa, W.; Kögler, R.

  • J. Electrochem. Soc. 144 (1997) 2211

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Publ.-Id: 2348