Flash lamp annealing for low-cost transparent conducting oxide layers


Flash lamp annealing for low-cost transparent conducting oxide layers

Rebohle, L.; Mathey, A.; Prucnal, S.; Wiesenhütter, K.; Vines, L.; Lindberg, P.; Svensson, B.; Bregolin, F. L.; Skorupa, W.

Aluminum-doped zinc oxide (AZO) is one of the most promising transparent conductive oxide material which is characterized by low resistivity, high transparency and most of all, by low cost of fabrication. AZO thin-films were deposited on p-type Si wafers via r.f. magnetron sputtering either at room temperature or at 400 °C followed by a thermal treatment in the millisecond range using flash lamp annealing (FLA). It is shown that FLA enhances the electrical activation of Al and minimizes secondary phase formation during post-deposition annealing. In addition, the optoelectronic and microstructural properties of the FLA treated samples are independent on the deposition temperature. As FLA is a cost-effective, easily scalable high-throughput technology, these results opens the possibility for a further, desirable cost reduction of the overall fabrication process.

Keywords: flash lamp annealing; doping; zinc oxide; transparent conducting oxide

  • Poster
    The International Conference on Coatings on Glass and Plastics, 12.-16.06.2016, Braunschweig, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-23611
Publ.-Id: 23611