Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
Radek, M.; Bracht, H.; Johnson, B. C.; Mccallum, J. C.; Posselt, M.; Liedke, B.
We report experimental studies on atomic mixing of matrix atoms during solid-phase epitaxy (SPE). For this purpose isotopically enriched germanium (Ge) multilayer structures were amorphized by Ge ion implantation up to a depth of 1.5 um. Recrystallization of the amorphous structure was performed at temperatures between 350°C and 450°C. By means of secondary-ion-mass-spectrometry (SIMS) the concentration-depth profiles of the Ge isotope before and after the SPE process were determined. Analyses of the experimental depth profiles reveal an upper limit of 0.5 nm for the displacement length of the Ge matrix atoms induced by the SPE process. This small displacement length confirms theoretical models and atomistic simulations of SPE, indicating that the SPE mechanism consists of bond-switching with nearest-neighbours at the amorphous-crystalline (a/c) interface.
Keywords: Solid-phase epitaxial recrystallization; germanium; atom transport
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23668) publication
-
Lecture (Conference)
E-MRS Spring Meeting, Symposium K: Group IV semiconductors materials research - growth, characterization and applications to electronics and spintronics, 02.-06.05.2016, Lille, France
Permalink: https://www.hzdr.de/publications/Publ-23668
Publ.-Id: 23668