Ultra-doped n-type germanium thin films for sensing in the mid-infrared


Ultra-doped n-type germanium thin films for sensing in the mid-infrared

Prucnal, S.; Liu, F.; Voelskow, M.; Vines, L.; Rebohle, L.; Lang, D.; Berencén, Y.; Andric, S.; Boettger, R.; Helm, M.; Zhou, S.; Skorupa, W.

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20±0.11E20 cm-3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm-1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.

Keywords: Ge; ion implantation; flash lamp annealing; plasmonics

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Permalink: https://www.hzdr.de/publications/Publ-23711
Publ.-Id: 23711