Tellurium hyperdoped Si: Flash lamp annealing vs. Pulsed laser melting


Tellurium hyperdoped Si: Flash lamp annealing vs. Pulsed laser melting

Wang, M.; Liu, F.; Yuan, Y.; Prucna, S.; Berencen, Y.; Rebohle, L.; Skorupa, W.; Helm, M.; Zhou, S.

Chalcogen-hyperdoped silicon has been a topic of great interesting due to its potential properties of sub-band gap optical and optoelectronic [1-3]. Tellurium hyperdoped Si was fabricated by the ion-implantation with different doses ranging from 1.09×1015 to 1.25×1016 atom/cm2 followed by two ultra-short annealing processing: flash lamp annealing (FLA) and pulsed laser melting (PLM). The structural properties of Te doped Si were characterized by Rutherford backscattering spectrometry / Channeling and Raman scattering. The Raman results show the high quality recrystallization of tellurium implanted Si by both FLA and PLM. In addition the Electrical properties of Tellurium hyperdoping silicon were measured by using a commercial Lakeshore Hall System. The differentiation of conductivity occurs with increasing tellurium concentration, which indicated that upon high concentration doping the insulator-metal transition was observed in tellurium doped Si. Moreover the carrier concentration and Hall mobilities measured at 300 K for different FLA and PLM samples with increasing tellurium concentration were measured. The PLM samples generally have a larger carrier concentration than the FLA samples, the mobility is around 2 times smaller.

Keywords: Hyperdoped Si; Ion-implantation; Flash lamp annealing; Pulsed laser melting

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Publ.-Id: 23833