Crystallization of multi-crystalline silicon in a cone-shaped, inductively heated crucible: MHD melt flow and seeded growth


Crystallization of multi-crystalline silicon in a cone-shaped, inductively heated crucible: MHD melt flow and seeded growth

Poklad, A.; Galindo, V.; Schmid, E.; Heinze, V.; Pätzold, O.; Stelter, M.; Gerbeth, G.

A novel, vertical Bridgman-type technique for growing multi-crystalline silicon ingots in an induction furnace is described. In contrast to conventional growth, a modified setup with a cone-shaped crucible and susceptor is used. A detailed numerical simulation of the setup is presented. It includes a global thermal simulation of the furnace and local simulation of the melt, which aims at the influence of the melt flow on the temperature and concentration fields. Furthermore, seeded growth of cone-shaped Si ingots using either a monocrystalline seed or a seed layer formed by pieces of poly-Si is demonstrated and compared to growth without seeds. The influences of the seed material on the grain structure and the dislocation density of the ingots are discussed.

Keywords: Bridgman growth; Dislocation density; Melt flow; Multi-crystalline silicon; Seeded growth

  • Contribution to proceedings
    10th PAMIR International Conference ‐ Fundamental and Applied MHD, 20.-24.06.2016, Cagliari, Italy
    Proceedings of the 10th PAMIR International Conference Fundamental and Applied MHD, Cagliari, 978-88-90551-93-2, 336-340
  • Poster
    10th PAMIR International Conference ‐ Fundamental and Applied MHD, 20.-24.06.2016, Cagliari, Italy

Permalink: https://www.hzdr.de/publications/Publ-23896
Publ.-Id: 23896