Ion implantation of Ge in Si, characterization in Si1-xGex structures


Ion implantation of Ge in Si, characterization in Si1-xGex structures

Ganetsos, T.; Mair, G. L. R.; Teichert, J.; Bischoff, L.; Aidinis, C.

  • Lecture (Conference)
    XIIIrd Greek Conf. in Solid State Physics, Thessaloninki, Greece, Sept. 1997

Permalink: https://www.hzdr.de/publications/Publ-2390
Publ.-Id: 2390