Nano patterns self-aligned to Ga dimer rows on GaAs surfaces
Nano patterns self-aligned to Ga dimer rows on GaAs surfaces
Engler, M.; Škereň, T.; Facsko, S.
Ion beam irradiation of semiconductors is a method to produce regular periodic nanoscale patterns self-organized on wafer scale. At low temperatures, the surface of semiconductors is typically amorphized by the ion beam. Above a material dependent dynamic recrystallization temperature however, the surface remains crystalline and ion beam irradiation produces regular arrays of faceted ripples on III-V semiconductors. This provides a powerful single-step technique for the production of nanostructures on a large area. On (001) surfaces these ripples are parallel to the [1-10] direction without any external anisotropy. The origin of this self-alignment was not fully understood until now. A simple experiment exposing the front side and back side of a GaAs(001) wafer to the ion beam clarifies its origin and proves that the ripples align to the Ga dimer rows. As the direction of Ga dimer rows rotates by 90°on the back side, the orientation of the ripples also rotates by 90° to [110]. We discuss the experimental results in view of a model where the pattern formation is driven by creation of vacancies and ad-atoms by the ion beam and their diffusion, which is linked to the direction of dimers on the surface.
Keywords: ion beam patterning; nano patterning; GaAs; AFM; ion irradiation
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 24155) publication
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http://arxiv.org/abs/1611.06836
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