Influence of the substrate structure (SIMOX, bulk Si) on the SiC synthesis by high dose carbon implantation

Romano-Rodriguez, A.; Kögler, R.; Bachrouri, A.; Perez-Rodriguez, A.; Serre, C.; Reuther, H.; Voelskow, M.; Skorupa, W.; Calvo-Barrio, L.; Morante, J. R.

Influence of the substrate structure (SIMOX, bulk Si) on the SiC synthesis by high dose carbon implantation

Romano-Rodriguez, A.; Kögler, R.; Bachrouri, A.; Perez-Rodriguez, A.; Serre, C.; Reuther, H.; Voelskow, M.; Skorupa, W.; Calvo-Barrio, L.; Morante, J. R.

Lecture (Conference)
7th Int. Conf. on Gettering and Defect Engineering in Semiconductor Technology, GADEST'97, Spa, Belgium, Oct. 5-10, 1997

Permalink: https://www.hzdr.de/publications/Publ-2459