Progress in the study of vacancy-type defects in ion implanted SiC by slow positron implantation spectroscopies
Progress in the study of vacancy-type defects in ion implanted SiC by slow positron implantation spectroscopies
Brauer, G.
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Lecture (others)
Univ. of East Anglia (School of Physics), Norwich, Nov. 7, 1997
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Publ.-Id: 2486