Progress in the study of vacancy-type defects in ion implanted SiC by slow positron implantation spectroscopies


Progress in the study of vacancy-type defects in ion implanted SiC by slow positron implantation spectroscopies

Brauer, G.

  • Lecture (others)
    Univ. of East Anglia (School of Physics), Norwich, Nov. 7, 1997

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Publ.-Id: 2486