Self-Organized Semiconductor Patterning by Polyatomic Broad Beam Ion Irradiation

Surface patterning based on self-organized nano-structures on i.e. semiconductor materials formed by heavy mono - and polyatomic ion irradiation from Liquid Metal (Alloy) Ion Sources (LMAIS) is a very promising technique. To overcome the lack of only very small treated areas by applying a Focused Ion Beam (FIB) instrument this technology was transferred into larger single-end ion beam systems like an ion implanter. Main component is an ion beam injector based on high current LMAIS, developed for space propulsion systems combined with suited ion optics allocating ion currents in the µA range in a nearly parallel beam of a few mm in diameter. The mass selection of the needed ion species can be performed either by an introduced ExB mass separator (Wien filter) and/or the existing magnet of the ion implanter itself which also can define the final ion energy up to 200 keV.
Different types of LMAIS (needle, porous emitter, capillary) are presented and characterized. The ion beam injector design is specified as well as the implementation of this module into a high current ion implanter (Danfysik Series 1090) operating at the HZDR Ion Beam Center (IBC). Finally the obtained results of large area surface modification of Ge using Bi2+ polyatomic ions from a GaBi capillary LMAIS at room temperature will be presented and discussed.