Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC by slow positron implantation spectroscopy (SPIS)


Characterization of vacancy-type defects in Al+ and N+ co-implanted SiC by slow positron implantation spectroscopy (SPIS)

Anwand, W.; Brauer, G.; Coleman, P. G.; Yankov, R. A.; Skorupa, W.

  • Lecture (Conference)
    30th Polish Seminar on Positron Annihilation, Jarnoltowek, Sept. 17-21, 1998
  • Lecture (Conference)
    8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept 6 - 12, 1998
  • Applied Surface Science 149 (1999) 140-143

Permalink: https://www.hzdr.de/publications/Publ-2559
Publ.-Id: 2559