Comparative study of ion implanted SiC by slow positron implantation and Rutherford backscattering/ channeling spectroscopies


Comparative study of ion implanted SiC by slow positron implantation and Rutherford backscattering/ channeling spectroscopies

Brauer, G.

  • Lecture (others)
    Texas Christian University (Department of Physics), Ft. Worth/TX, 02.11.1998
  • Lecture (others)
    University of Texas at Arlington (Physics Department), Arlington/TX, 03.11.1998

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Publ.-Id: 2577