Implantation defects in Si at half of the projected ion range (1/2 Rp)


Implantation defects in Si at half of the projected ion range (1/2 Rp)

Kögler, R.

  • Lecture (others)
    Fed. Univ. of Rio Grande dol Sul, Porto Alegre, Brasilien, Nov.17, 1998

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Publ.-Id: 2587