Implantation defects in Si at half of the projected ion range (1/2 Rp)
Implantation defects in Si at half of the projected ion range (1/2 Rp)
Kögler, R.
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Lecture (others)
Fed. Univ. of Rio Grande dol Sul, Porto Alegre, Brasilien, Nov.17, 1998
Permalink: https://www.hzdr.de/publications/Publ-2587
Publ.-Id: 2587