Nanofabrication activities at HZDR


Nanofabrication activities at HZDR

Georgiev, Y. M.

During this talk I will first briefly introduce the Helmholtz-Zentrum Dresden-Rossendorf (HZDR), the Institute of Ion Beam Physics and Materials Research as well as the Ion Beam Centre as a user facility run by the Institute.

Next, I will present some of the equipment available at the nanofabrication facility in Rossendorf (NanoFaRo), in particular electron beam lithography (EBL) systems as well as tools for thin film deposition and reactive ion etching (RIE), paying special attention on their capabilities.

I will then go through the most important nanofabrication projects, both internal and external, run lately at NanoFaRo, including top-down fabrication and electrical characterisation of silicon (Si) nanowire (NW) reconfigurable field effect transistors (RFETs) together with detailed study of nickel (Ni) silicidation of Si NWs; top-down fabrication of a large number of gratings with different periodicity on 2 µm thick Si membranes for laser targets; electrical contacting of randomly distributed nanostructures (bottom-up grown VO2 and hyperdoped Si NWs, DNA origami, flakes of 2D materials, etc.); top-down fabrication of four-terminal Si NW test devices for modulation doping experiments; nanopatterning of polymer brushes by reactive writing with EBL; bevel formation by EBL and RIE for dopant/conductance profiling of thin films and NWs by conductive atomic force microscopy (C-AFM); top-down fabrication of Si NWs hyperdoped with selenium (Se) as well as of plasmonic antennas on Si hyperdoped with tellurium (Te); fabrication and electrical characterisation of FETs on 2D materials, etc. Concluding this part of my talk, I will draw your attention to some highlights of our activities, focussing mostly on processes for high-resolution patterning as well as on high-precision electrical contacting of randomly distributed nanostructures.

Finally, I will discuss possibilities for collaboration between HZDR and UCC/Tyndall in the field of our activities.

Keywords: nanofabrication; electron beam lithography; reactive ion etching; silicon nanowires; reconfigurable field effect transistors; nickel silicidation; silicon gratings; silicon membranes; laser targets; DNA origami; 2D materials; conductive atomic force microscopy; hyper doped silicon nanowires; plasmonic antennas

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Publ.-Id: 27368