Advanced thermal processing of group-IV materials and beyond


Advanced thermal processing of group-IV materials and beyond

Rebohle, L.; Skorupa, W.; Prucnal, S.; Berencén, Y.; Zhou, S.; Helm, M.

One of the main issues in semiconductor research is doping and crystallization. To meet the high standards of today’s microelectronic industry, especially in the context of nanostructures, more and more non-equilibrium processing technologies has been entered. This applies, above all, to thermal processing which usually has to activate dopants and anneal out defects, but has to suppress diffusion and segregation at the same time. This presentation is focused on the use of millisecond flash lamp annealing (FLA) for advanced thermal processing of group-IV materials including Si, Ge and GeSn alloys. FLA is able to exceed the solid solubility limit of dopants which is discussed for the cases of P and Sn in thin Ge films as well as for Se in Si nanowires. Moreover, the specific conditions of FLA determine whether a thin amorphous film on a crystalline substrate, e.g. an amorphous Ge layer on Ge after ion implantation, recrystallizes in a poly- or monocrystalline way. Finally, perspectives of FLA for other materials will be presented.

Keywords: flash lamp annealing; ion implantation; hyperdoping of silicon; Sn doping of germanium; silicon nanowire

Related publications

  • Invited lecture (Conferences)
    European Materials Research Society Spring Meeting 2018, 18.-22.06.2018, Strasbourg, France

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Publ.-Id: 27648