Intermediate-band silicon nanowires realized by ion beam hyperdoping


Intermediate-band silicon nanowires realized by ion beam hyperdoping

Berencén, Y.; Prucnal, S.; Möller, W.; Hübner, R.; Rebohle, L.; Böttger, R.; Glaser, M.; Schönherr, T.; Yuan, Y.; Wang, M.; Georgiev, Y. M.; Erbe, A.; Lugstein, A.; Helm, M.; Zhou, S.; Skorupa, W.

The intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] This phenomenon is referred to as hyperdoping. As intermediate-band material, bulk Si hyperdoped with chalcogens or transition metals holds promises for Si-based short-wavelength infrared photodetectors and solar cells.[3,4] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells.[5,6]
Here, we show a CMOS-compatible method based on non-equilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude above the equilibrium solid solubility. The approach relies on using ion implantation followed by flash lamp annealing for hyperdoping Si/SiO2 core/shell nanowires. We induce, by millisecond-flash lamp annealing, a bottom-up template-assisted solid-phase epitaxy recrystallization of the nanowires. This results in the formation of intermediate-band Se-hyperdoped nanowires which exhibit room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device.
References
[1] Sher M J, Mazur E, Appl. Phys. Lett. 2014;105:032103.
[2] Ertekin E, Winkler M, T, Recht D, Said A J, Aziz M J, Buonassisi T, Grossman J C, Phys. Rev. Lett. 2012;108:026401.
[3] Berencén Y, Prucnal S, Liu F, Skorupa I, Hübner R, Rebohle L, Zhou S, Schneider H, Helm M, Skorupa W, Sci. Rep. 2017;7:43688.
[4] Mailoa J P, Akey A J, Simmons C B, Hutchinson D, Mathews J, Sullivan J T, Recht D, Winkler M T, Williams J S, Warrender J M, Persans P D, Aziz M J, Buonassisi T, Nat. Commun. 2014;5:3011.
[5] Beard M C, Luther J M, Nozik A J, Nat. Nanotech. 2014;9:951.
[6] Tian B, Zheng X, Kempa T J, Fang Y, Yu N, Yu G, Huang J, Lieber C M, Nature 2007:449;885.

Keywords: Intermediate-band nanowires; ion beam hyperdoping; flash lamp annealing

Related publications

  • Lecture (Conference)
    XII-th International Conference "Ion Implantation and Other Applications of Ions and Electrons", ION 2018, 18.-21.06.2018, Kazimierz Dolny, Poland

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