Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping


Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Berencén, Y.; Prucnal, S.; Möller, W.; Hübner, R.; Rebohle, L.; Schönherr, T.; Bilal Khan, M.; Wang, M.; Glaser, M.; Georgiev, Y. M.; Erbe, A.; Lugstein, A.; Helm, M.; Zhou, S.

A method for cross-sectional doping of individual Si/SiO2 core/shell nanowires (NWs) is presented. P and B atoms are laterally implanted at different depths in the Si core. The healing of the implantation-related damage together with the electrical activation of the dopants takes place via solid phase epitaxy driven by millisecond-range flash lamp annealing. Electrical measurements through a bevel formed along the NW enabled us to demonstrate the concurrent formation of n- and p-type regions in individual Si/SiO2 core/shell NWs. These results might pave the way for ion beam doping of nanostructured semiconductors produced by using either top-down or bottom-up approaches.

Keywords: nanowires; ion beam doping; flash lamp annealing

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Publ.-Id: 27975