Strong Variation Of Electronic Properties Of MoS2 And WS2 Nanotubes In Presence Of External Electric Fields


Strong Variation Of Electronic Properties Of MoS2 And WS2 Nanotubes In Presence Of External Electric Fields

Zibouche, N.; Philipsen, P.; Kuc, A.

Transition-metal dichalcogenides attracted a huge international research focus from the point of two-dimensional materials. These materials exist also as nanotubes, how- ever, they have been mostly studied for their lubricant properties. Despite their inter- esting electronic properties, quite similar to their 2D counterparts, nanotubes remain much less explored. Like in 2D materials, electronic properties of nanotubes can be strongly modulated by external means, such as strain or electric field. Here, we report on the effect of external electric fields on the electronic properties of MoS2 and WS2 nanotubes, using density functional theory. We show that the electric field induces a strong polarization in these nanotubes, what results in a nearly linear decrease of the band gaps with the field strength and eventually in a semiconductor-metal transi- tion. In particular for large tube diameters, this transition can occur for field strengths between 1 - 2 V nm−1. This is an order of magnitude weaker than fields required to close the band gaps in the corresponding 2D mono- and bilayers of transition-metal dichalcogenides. We also observe splittings of the degenerate valence and conduction band states due to the Stark effect. Accordingly, such nanotubes could be used in na- noelectronics as logical switches, even at moderate field strengths that can be achieved experimentally, for example, by applying a gate voltage.

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Permalink: https://www.hzdr.de/publications/Publ-28248
Publ.-Id: 28248