Efficient ion-slicing of InP thin film for Si-based hetero-integration


Efficient ion-slicing of InP thin film for Si-based hetero-integration

Lin, J.; You, T.; Wang, M.; Huang, K.; Zhang, S.; Jia, Q.; Zhou, M.; Yu, W.; Zhou, S.; Wang, X.; Ou, X.

Integration of high quality single crystalline InP thin film on Si substrate has potential applications in Si-based photonics and high-speed electronics. In this work, the exfoliation of a 634 nm crystalline InP layer from the bulk substrate was achieved by sequential implantation of He ions and H ions at room temperature. It was found that the sequence of He and H ion implantations has a decisive influence on the InP surface blistering and exfoliation, which only occur in the InP pre-implanted with He ions. The exfoliation efficiency first increases and then decreases as a function of H ion implantation fluence. A kinetics analysis of the thermally activated blistering process suggests that the sequential implantation of He and H ions can reduce the InP thin film splitting thermal budget dramatically. Finally, a high quality 2 inch InP-on-Si(100) hetero-integration wafer was fabricated by He and H ion sequential implantation at room temperature in combination with direct wafer bonding.

Keywords: InP-on-Si; hetero-integration; ion-slicing; wafer bonding

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Permalink: https://www.hzdr.de/publications/Publ-28439
Publ.-Id: 28439