Towards room-temperature extended infrared Si-based photoresponse: A case study of Te-hyperdoped Si


Towards room-temperature extended infrared Si-based photoresponse: A case study of Te-hyperdoped Si

Wang, M.; Berencén, Y.; García Hemme, E.; Hübner, R.; Yuan, Y.; Xu, C.; Rebohle, L.; Böttger, R.; Heller, R.; Schneider, H.; Skorupa, W.; Helm, M.; Zhou, S.

Presently,room-temperature broadband Si-based photodetectors are required for Si photonic systems.Here,we demonstrate roomtemperature sub-band gap photoresponse of photodiodes based on Si hyperdoped with Te.The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed laser melting and incorporate Te concentrations beyond the solid solubility limit.An insulator-to-metal transition driven by increasing Te concentration accompanied with a band gap renormalization is observed.The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid- and far- infrared regions.This work contributes to establish room temperature Si-based broadband infrared photonic system.

Related publications

  • Lecture (Conference)
    DPG-Frühjahrstagung 2018, 12.03.2018, Berlin, Germany

Permalink: https://www.hzdr.de/publications/Publ-28565
Publ.-Id: 28565