Ion Beam Induced Epitaxial Crystallization of SiC: Fluence - and Temperature Dependence
Ion Beam Induced Epitaxial Crystallization of SiC: Fluence - and Temperature Dependence
Kögler, R.; Heera, V.; Skorupa, W.; Voelskow, M.
- Ion Beam Modification of Materials, 1996 Elsevier Science B. V. p. 912
-
Poster
IBMM '95
Permalink: https://www.hzdr.de/publications/Publ-287
Publ.-Id: 287