Ion Beam Induced Epitaxial Crystallization of SiC: Fluence - and Temperature Dependence


Ion Beam Induced Epitaxial Crystallization of SiC: Fluence - and Temperature Dependence

Kögler, R.; Heera, V.; Skorupa, W.; Voelskow, M.

  • Ion Beam Modification of Materials, 1996 Elsevier Science B. V. p. 912
  • Poster
    IBMM '95

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Publ.-Id: 287