Antiferromagnetic domain wall control via surface spin flop in fully tunable synthetic antiferromagnets with perpendicular magnetic anisotropy
Antiferromagnetic domain wall control via surface spin flop in fully tunable synthetic antiferromagnets with perpendicular magnetic anisotropy
Böhm, B.; Fallarino, L.; Pohl, D.; Rellinghaus, B.; Nielsch, K.; Kiselev, N. S.; Hellwig, O.
Antiferromagnetic (AF) domain walls have recently attracted revived attention, not only in the emerging field of AF spintronics, but also more specifically for offering fast domain wall velocities and dynamic excitations up to the terahertz frequency regime. Here, we introduce an approach to nucleate and stabilize an AF domain wall in a synthetic antiferromagnet (SAF). We present experimental and micromagnetic studies of the magnetization reversal in [(Co/Pt)X-1/Co/Ir]N-1(Co/Pt)X SAFs, where interface-induced perpendicular magnetic anisotropy (PMA) and AF interlayer exchange coupling (IEC) are completely controlled via the individual layer thicknesses within the multilayer stack. By combining strong PMA with even stronger AF-IEC, the SAF reveals a collective response to an external magnetic field applied normal to the surface, and we stabilize the characteristic surface spin-flop (SSF) state for an even number N of AF-coupled (Co/Pt)X-1/Co multilayer blocks. In the SSF state our system provides a well-controlled and fully tunable vertical AF domain wall, easy to integrate as no single-crystal substrates are required and with uniform two-dimensional magnetization in the film plane for further functionalization options, such as lateral patterning via lithography.
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Physical Review B 100(2019)14, 140411
DOI: 10.1103/PhysRevB.100.140411
Cited 17 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-29901
Publ.-Id: 29901