Non-volatile memory effects of ion-beam synthesized Ge and Si nanoclusters in thin SiO2 layers: electrical characterization vs. microstructure


Non-volatile memory effects of ion-beam synthesized Ge and Si nanoclusters in thin SiO2 layers: electrical characterization vs. microstructure

Gebel, T.; von Borany, J.; Skorupa, W.; Möller, W.; Thees, H.-J.; Wittmaack, M.; Stegemann, K.-H.

Nanocluster memories are promising for future non-volatile memory applications. In this work thin SiO2 films were implanted with Ge+ and Si+ and annealed subsequently. Charge storage effects of the MOS capacitors have been studied through I-V and high frequency C-V measurements. Positive voltage pulses lead to a positive flatband voltage shift of the C-V curve. Detrapping by applying negative voltage pulses leads to a negative shift. The achieved programming window using 6 V / 100 ms pulses for Ge based structures is higher than that for Si (2.0 V vs. 0.2 V). However the retention times for Si based memories are longer. For dedicated process parameters microstructural investigations (RBS, XTEM) of Ge+ implanted SiO2 layers showed two bands of clusters, one near the interface SiO2/Si and one in the center of the SiO2 layer.

Keywords: nanocluster; nanocrystal; non-volatile memory

  • Lecture (Conference)
    MRS Fall Meeting, Symposium T, Boston, Nov. 29 - Dec. 3, 1999
  • Contribution to external collection
    Mat. Res. Soc. Symp. Proc. 592, T6.10.1 (2000)

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Publ.-Id: 3084