Band structure of a HgTe-based three-dimensional topological insulator
Band structure of a HgTe-based three-dimensional topological insulator
Gospodaric, J.; Dziom, V.; Shuvaev, A.; Dobretsova, A. A.; Mikhailov, N. N.; Kvon, Z. D.; Novik, E. G.; Pimenov, A.
From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the threedimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the k · p model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.
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Physical Review B 102(2020), 115113
DOI: 10.1103/PhysRevB.102.115113
Cited 10 times in Scopus -
Contribution to WWW
arXiv:2010.09532 [cond-mat.mes-hall]: https://arxiv.org/abs/2010.09532
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Permalink: https://www.hzdr.de/publications/Publ-31518
Publ.-Id: 31518