In situ diagnostic during growth of BN films


In situ diagnostic during growth of BN films

Fukarek, W.

Real time ellipsometry in conjunction with real time stress and evaporation rate measurement is applied to ion beam assisted deposition of boron nitride films. Information on the reactivity of boron with water vapor is obtained from in situ ellipsometry data and conclusions concerning the stability of BN films are drawn. Damage formation in the Si substrate in the beginning of the deposition process is revealed. Real time stress measurement in combination with ellipsometry shows, that stress buildup occurs in the end-of-range region of the plating ions and not in the whole collision cascade or thermal spike region. Information on dynamic densification of tBN, derived from real time ellipsometry and evaporation rate measurement, is reported for the first time. A new model for cBN growth is proposed: instead of compressive stress, a certain level of tBN densification is required for cBN to nucleate. It is shown that tBN density and compressive stress are not necessarily correlated parameters.

Keywords: BN; IBAD; ellipsometry; stress; film growth model

  • Contribution to proceedings
    Proceedings of TATF'2000 (8th International Symposium on Trends and Applications in Thin Films) March 27-30 (2000) Nancy, France.

Permalink: https://www.hzdr.de/publications/Publ-3233
Publ.-Id: 3233