Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface


Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

Breev, I. D.; Shang, Z.; Poshakinskiy, A. V.; Singh, H.; Berencen, Y.; Hollenbach, M.; Nagalyuk, S. S.; Mokhov, E. N.; Babunts, R. A.; Baranov, P. G.; Suter, D.; Tarasenko, S. A.; Astakhov, G.; Anisimov, A. N.

Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing.

Keywords: Solid-state spin qubits; Silicon vacancy; 6H-SiC; Quantum communication

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Permalink: https://www.hzdr.de/publications/Publ-32955
Publ.-Id: 32955