Towards Scalable Reconfigurable Electronics: Fabrication of Schottky Barrier Field-Effect Transistors using Flash Lamp Annealing
Towards Scalable Reconfigurable Electronics: Fabrication of Schottky Barrier Field-Effect Transistors using Flash Lamp Annealing
Khan, M. B.; Ghosh, S.; Prucnal, S.; Hübner, R.; Erbe, A.; Georgiev, Y.
To complement the scaling down of complementary metal-oxide-semiconductor (CMOS), new device concepts have been introduced. One such concept is the reconfigurable field-effect transistor (RFET). In the most general case, an RFET is a silicon nanowire (SiNW) based device. The SiNW is silicided at both ends, which results in silicide-Si-silicide Schottky junctions. Typically, two distinct gate electrodes are placed on silicide-Si junctions. By controlling the electrostatic potential on the gate electrodes, the RFET is programmed to the p- or n- polarity. We report on the fabrication and electrical characterization of top-down fabricated SiNW based RFETs. Flash lamp annealing based silicidation process is developed, which enables control over the silicidation process. Uni-polar transfer characteristics are obtained using two top-gates. The effect of implementing various gate dielectric materials (SiO2, Al2O3 and hBN) is studied to enhance device electrostatics.
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Poster
(Online presentation)
84th Annual DPG Meeting, 27.09.2021, Virtual, Germany
Permalink: https://www.hzdr.de/publications/Publ-33262
Publ.-Id: 33262