Analysis of X-ray rocking curves in (001) silicon crystals implanted with nitrogen by plasma immersion ion implantation


Analysis of X-ray rocking curves in (001) silicon crystals implanted with nitrogen by plasma immersion ion implantation

Abramof, E.; Beloto, A. F.; Ueda, M.; Gomes, G. F.; Berni, L. A.; Reuther, H.

High-resolution X-ray diffraction methods have been used to characterize nitrogen doped silicon obtained by PIII.

  • Nuclear Instruments and Methods B 161-163 (2000) 1054-1057

Permalink: https://www.hzdr.de/publications/Publ-3557
Publ.-Id: 3557