Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO2 Layers


Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO2 Layers

Spiga, S.; Ferrari, S.; Fanculli, M.; Schmidt, B.; Heinig, K.-H.; Grötzschel, R.; Mücklich, A.; Pavia, G.

In this work we investigate the ion beam synthesis of Sn and Sb clusters in thin oxides. 80 keV (doses of 0.1-1 x 1016 cm-2) Sn implanation in 85 nm thick SiO2 followed by RTP annealing (800-1000°C for 30-300 under Ar or N2 dry ambient) leads to the formation of two cluster bands, near the SiO2 surface and the Si/SiO2 interface. In addition, big isolated clusters are randomly distributed in the middle of the oxide. Cluster-size distribution and cluster-crystallinty are related to implantation dose and annealing time. Low energy (10-12 kev) Sb and Sn implantation (doses 2-5 x 1015 cm-2) leads to the formation of very uniform cluster-size distribution. Under specific process conditions, only an interface cluster band is observed.

Keywords: ion beam synthesis; nanoclusters; Tin; Antimony; ion implantaion

  • Poster
    Materials Research Society 2000 Fall Meeting, Symp. O "Ion Beam Synthesis and Processing of Advanced Materials" , Boston, USA, Nov. 27-29, 2000
  • Contribution to proceedings
    Mat.Res.Soc.Symp.Proc. Vol. 647 (2001) O11.23 MRS2000 Fall Meeting, Symposium O: "Ion Beam Processing of Advanced Materials", Boston, USA, Nov. 27-29, 2000

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Publ.-Id: 3665