Implantation induced defects in silicon detected by Cu decoration technique


Implantation induced defects in silicon detected by Cu decoration technique

Kögler, R.; Peeva, A.; Eichhorn, F.; Kaschny, J.; Voelskow, M.; Skorupa, W.; Hutter, H.

Cu is especially suitable to decorate defects in silicon. The Cu decoration technique has been applied for the detection of point defect clusters in the RP/2 region of Si+ ion implanted silicon. The results of this technique are compared with the results obtained by other analysis techniques. Nanocavities at RP/2 could be observed only in cross section transmission electron microscopy specimen prepared by cleavage technique. These nanocavities are probably the dominant gettering centres for Cu at RP/2. Small interstitial clusters may exist there as well. The conditions for the formation and for the annealing of the gettering layer at RP/2 have been determined. Impurity gettering at RP/2 can be prevented by a sequence of additional Si+ implantations to balance implantation-induced excess vacancies which are the origin of the nanocavities.

Keywords: Ion implantation; defects; silicon; Cu; impurity gettering; Rp/2 defects; TEM specimen preparation

  • Journal of the Electrochemical Society 29 (2001) 133
  • Lecture (Conference)
    Symp. on Crystalline Defects and Contamination DECON 2001, Nürnberg Sept. 13-14, 2001

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Publ.-Id: 3927