Evolution of ion implantation caused vacancy-type defects in 6H-SiC probed by Slow Positron Implantation Spectroscopy


Evolution of ion implantation caused vacancy-type defects in 6H-SiC probed by Slow Positron Implantation Spectroscopy

Anwand, W.; Brauer, G.; Skorupa, W.

6H-SiC n-type wafers were implanted with Al+ and N+ ions in two steps: first Al+ double implantation (100 keV, 5x1016 cm-2 and 160 keV, 1.3x1017 cm-2 ) followed by N+ double implantation (65 keV, 5x1016 cm-2 , 120 keV, 1.3x1017 cm-2 ). The implantation was carried out at a substrate temperature of 800 0C in order to avoid amorphisation. In this way a buried SiC1-x(AlN)x layer could be created. Variable-energy positron Doppler broadening measurements were performed at room temperature using a computer-controlled magnetic transport beam system in order to characterize the vacancy-type defects created by ion implantation. Depth profiles could be evaluated from the measured Doppler broadening profiles. The defect distribution and the defect size after the complete co-implantation are discussed and the contribution of the different implantation steps to the evolution of this defect structure is shown.

This research is supported by the Deutsche Forschungsgemeinschaft (DFG) under
Grant No. Br 1250/13-1 and Br 1250/13-2.

Keywords: 6H-SiC; N and Al co-implantation; vacancy-type defects; slow positron spectroscopy

  • Applied Surface Science 184 (2001) 247
  • Poster
    European Materials Research Society Spring Meeting, Strasbourg, France, June 5-8, 2001

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