Porous silicon implanted with nitrogen by plasma immersion ion implantation


Porous silicon implanted with nitrogen by plasma immersion ion implantation

Beloto, A. F.; Ueda, M.; Abramof, E.; Senna, J. R.; Leite, N. F.; Da Silva, M. D.; Reuther, H.

Porous silicon samples were prepared on (100) monocrystalline silicon wafers and implanted with nitrogen by PIII and analyzed by AES and reflectance measurements.

  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (2001) 224-228

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Publ.-Id: 3997