Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation
Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation
Abramof, E.; Beloto, A. F.; Ueda, M.; Günzel, R.; Reuther, H.
Nitrogen was implanted in (001) silicon wafers using 12 kV pulses in a glow-discharge PIII system and at 35 keV in an ECR PIII facility.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (2001) 229-234
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