Study of the different stages of damage induced by 200 keV Ge+ ion implantation in 6H-SiC
Study of the different stages of damage induced by 200 keV Ge+ ion implantation in 6H-SiC
Pacaud, Y.; Brauer, G.; Perez-Rodriguez, A.; Stoemenos, J.; Barklie, R.; Voelskow, M.; Skorupa, W.
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Contribution to external collection
IC SCRM 1995, Kyoto, Japan, IOP Publishing
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