AlN films obtained by broad energy nitrogen ion implantation and Rapid Thermal Annealing Process


AlN films obtained by broad energy nitrogen ion implantation and Rapid Thermal Annealing Process

Grigorov, K.; Beshkov, G.; Maciel, H. S.; Djouadi, A.; Matz, W.; Anguelov, C.; Velchev, N.

The paper deals with structural, morphological and electrical investigations of thin AlN films obtained by two techniques. The first one consists in rapid thermal annealing of aluminium evaporated onto Si (100) at 600, 800 and 1000oC in NH3 atmosphere for times in the range of 15-180 sec. The other part of the structures was obtained by broad energy range ion bombardment (BERIB) of aluminium by doses ranging from 1.5x1017 cm-2 to 6x1017 cm-2. This technique, to our knowledge was not previously described in the literature. The ion implantation was carried out with two species - nitrogen atoms with energies from 50, 30, and 20 keV and nitrogen ions with energies from 50 and 30 keV. These energy spectra were chosen in order to ensure continued and wide nitride layer of thickness at least of 150 nm. The simulations of the implanted constituent distributions were estimated by the code SRIM. The both implanted series were consequently annealed at 800 and 1000oC for times ranging from 30 to 90 sec. Four-point electrical measurements, scanning electron microscopy, SEM, X-ray diffraction and Rutherford Backscattering Spectrometry (RBS) have been used to characterize the layers.

Keywords: Aluminium Nitrides; RTA; Ion Implantation; and Characterization

  • Poster
    Int. Conf. Diamond 2001, Budapest, Sept. 1-4, 2001
  • Journal of Optoelectronics and Advanced Materials 7(2005)1, 381-384

Permalink: https://www.hzdr.de/publications/Publ-4340
Publ.-Id: 4340