Low resistivity, p-type SiC layers produced by Al implantation and ion beam induced crystallization


Low resistivity, p-type SiC layers produced by Al implantation and ion beam induced crystallization

Heera, V.; Madhusoosanan, K. N.; Mücklich, A.; Panknin, D.; Skorupa, W.

Low resistivity ( < 0.1 Ohm cm), p-type SiC layers can be produced by the combination of high dose Al ion beam doping and ion beam induced crystallization. The implanted SiC layers have a nanocrystalline structure consisting of randomly oriented grains of mainly 3C-SiC. The electrical properties of the doped layers were investigated by sheet resistance and Hall measurements in dependence on temperature. In comparison with the standard doping process the hole concentration is enhanced by more than one order of magnitude.

Keywords: SiC; p-type doping; Al implantation; ion beam induced crystallization; nanocrystalline semiconductor; sheet resistance; Hall measurements

  • Applied Physics Letters 81 (2002) 70-72

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Publ.-Id: 4354