AlN growth kinetics during ion nitriding of aluminum


AlN growth kinetics during ion nitriding of aluminum

Fitz, T.; Möller, W.

To study the kinetics of Al ion nitriding, a series of experiments have been performed at an ion energy of 1.6 keV, an ion current density of 0.2 mA/cm2 and substrate temperatures varied from 250 °C to 400 °C. The nitride layers have been analyzed by nuclear reaction analysis (NRA) and scanning electron microscopy (SEM). Binary collision computer simulations have been performed to calculate the sputtering yields of N and Al. Depending on the experimental conditions, the nitriding kinetics is either controlled by the supply of N atoms from the ion beam or by the diffusion of Al atoms trough the growing nitride layer. Solutions of rate equations describing the growth of the nitride layer are fitted to the experimental data, from which diffusion and activation parameters are obtained for the transport of the Al atoms.

Keywords: Aluminium; nitriding; diffusion; AlN

  • J.Appl.Phys. Vol. 92, No. 11, (2002) p.6862-6867

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Publ.-Id: 4448