Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers


Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers

Zhao, J.; Rebohle, L.; Gebel, T.; von Borany, J.; Skorupa, W.

The electrical conduction mechanism of Ge-implanted SiO2 films exhibiting room-temperature blue electroluminescence with a power efficiency of up to 0,5 % [Appl.Phys.Lett.71(1997)2809] is investigated. In detail it will be shown that the current–voltage characteristic of Ge-implanted SiO2 layers for applied electric fields between 4.5 and 7 MV/cm can be modeled very well with the space charge limited (SCL)conduction mechanism in the trap-filled-limited (TFL) region.The current density j shows a power law dependence j ~ Ea of the applied electric field E, and the temperature dependence of a exhibits the typical behavior of TFL injection currents. For applied electric fields above 7 MV/cm the charge transport mechanism is explained by SCL currents which are superimposed by effects of field emission, impact ionization, and electron–hole recombination.

  • Solid-State Electronics 46 (2002) 661-664

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Publ.-Id: 4477