Electroluminescence from thin SiO2 layers after Si- and C-Coimplantation


Electroluminescence from thin SiO2 layers after Si- and C-Coimplantation

Gebel, T.; Rebohle, L.; Sun, J.; Skorupa, W.

The strong need for optoelectronic devices which can be integrated into the current silicon technology has initiated an extensive research for silicon-based light emitters. One of the promising approaches is the formation of luminescence centers in dielectric layers by means of ion beam synthesis. In this paper we explore the EL properties of thermally grown SiO2 layers co-implanted with silicon and carbon ions. The main motivation for this work was the expectation of a higher device stability using Si/C compounds within the SiO2 network compared to our former work with Ge and Sn implants. 360 nm thick SiO2 layers were implanted with Si, followed by an intermediate annealing step and a second implantation of C. Finally the structures were annealed at 1100°C. The doses were chosen in order to achieve peak concentrations of excess Si and C of 5-10 %. The devices show a broad PL between 400 and 600 nm with a main peak around 450 nm. The broad EL spectra show additional peaks around 370 nm and between 500-550 nm which are increased with decreasing Si/C concentration. The shape of the EL spectrum does not change with increasing injection currents, which implies that various types of defects occur for the different concentrations. The device stability is improved in comparison to Ge / Sn implanted oxide layers.

Keywords: nanocluster; ion implantation; electroluminescence

  • Physica E 16/3-4 (2003) 366-369
  • Poster
    E-MRS Spring Meeting, Symp. H, Strasbourg (France), 18.-21.06.2002

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Publ.-Id: 4514