Low capacitance point diodes fabricated with focused ion beam implantation
Low capacitance point diodes fabricated with focused ion beam implantation
Bischoff, L.; Schmidt, B.
Low capacitance p+n point diodes were fabricated by combination of sputtering and implantation of a Ga focused ion beam through a thin oxide layer on a silicon substrate. The capacitance of the diodes were determined to be in the range of aF. The current-voltage characteristics show a tendency to a generation / recombination controlled behaviour with increasing dose i.e. with increasing depth of the sputter crater. This is correlated to the big amount of inactive Ga atoms of about 70% in the Si lattice after an annealing of 900°C; 20 min, N2.
Keywords: focused ion beam; point diodes; Ga implantation; sputtering; I-V characteristics
- Solid State Electronics 47 (2003) 989
Permalink: https://www.hzdr.de/publications/Publ-4528
Publ.-Id: 4528